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GlobalFoundries is launching a new 7nm-class manufacturing process called FDX Fusion, which uses planar transistors and fully-depleted silicon-on-insulator (FD-SOI) technology instead of the FinFET approach it abandoned in 2018. This marks a return to advanced FD-SOI development after years of work on its existing 22nm platform. The company plans to begin production at its Dresden, Germany facility in 2028, with initial demo silicon for customer evaluation expected in early 2027 and the first process design kit (PDK) available by mid-2027.

The technology aims to support automotive, edge AI, industrial, robotics, and sensor applications by combining digital logic with RF transistors, analog circuitry, embedded nonvolatile memory, and in-memory computing on a single chip. GlobalFoundries promises more than twice the transistor density of its original 2015 FDX process and supports processor IP based on MIPS, ARC, and RISC-V architectures. Sébastien Dauvée, chief executive of CEA-Leti, stated that the firm has been advancing FD-SOI technology for decades and is working to promote its adoption through the FAMES pilot line.

Several companies have expressed interest in the new process, including BMW, Bosch, Infineon, NXP, Siemens, and Tesla. While Infineon confirmed collaboration on future 7nm-class technologies for radar and wireless communications, GlobalFoundries has not disclosed specific product plans or committed production volumes. The announcement represents a significant step for European semiconductor development, offering an alternative to Asian and U.S. foundries without requiring dependence on leading-edge FinFET processes.